Mercury zinc telluride 10.6 μm ambient temperature photodetectorsPIOTROWSKI, J.Acta physica Polonica. A. 1991, Vol 80, Num 5, pp 751-765, issn 0587-4246Article

Application of mercury zinc telluride for high temperature photoconductorsNIEDZIELA, T; PIOTROWSKI, J.Journal of Technical Physics. 1990, Vol 31, Num 3-4, pp 295-304, issn 0324-8313Article

N-type doping of p-type mercury zinc telluride by ion implantation of boronCENTENO, J. M; GONZALEZ, C; SANZ-MAUDES, J et al.Materials letters (General ed.). 1990, Vol 9, Num 2-3, pp 60-64, issn 0167-577XArticle

The direct determination of the vacancy concentration and P-T phase diagram of Hg_0.8Zn_0.2Te by dynamic mass-loss measurementsYI GAO SHA; WIEDEMEIER, H.Journal of electronic materials. 1990, Vol 19, Num 11, pp 1303-1311, issn 0361-5235Article

First design and characterization of HgZnTe optical waveguidesAZEMA, A; GAUCHEREL, P; ROUSTAN, J. C et al.Journal of applied physics. 1990, Vol 68, Num 12, pp 6029-6032, issn 0021-8979Article

Mercury zinc telluride longwavelength high temperature photoconductorsPIOTROWSKI, J; NIEDZIELA, T.Infrared physics. 1990, Vol 30, Num 2, pp 113-119, issn 0020-0891, 7 p.Article

Hg_1-xCd_xTe/Hg_1-xZn_xTe superlattices with constant Hg contentFELDMAN, R. D; FUOSS, P. H; AUSTIN, R. F et al.Applied physics letters. 1989, Vol 54, Num 15, pp 1466-1468, issn 0003-6951Article

The p-to-n conversion of HgCdTe, HgZnTe and HgMnTe by anodic oxidation and subsequent heat treatmentBROGOWSKI, P; PIOTROWSKI, J.Semiconductor science and technology. 1990, Vol 5, Num 6, pp 530-532, issn 0268-1242, 3 p.Article

Resistivity and high magnetic field Hall effect measurements on as-grown p-type HgZnTeFAJARDO, P; SANZ-MAUDES, J; RODRIGUEZ, T et al.Journal of crystal growth. 1990, Vol 101, Num 1-4, pp 872-875, issn 0022-0248Conference Paper

Microhardness of ZnxCdyHg1-x-yTe solid solutionsANDRUKHIV, A. M; IVANOV-OMSKII, V. I; SIDORCHUK, P. G et al.Soviet physics. Solid state. 1992, Vol 34, Num 11, pp 1934-1935, issn 0038-5654Article

Localized excitons in II-VI semiconductor alloys : density-of-states model and photoluminescence line-shape analysisOUADJAOUT, D; MARFAING, Y.Physical review. B, Condensed matter. 1990, Vol 41, Num 17, pp 12096-12105, issn 0163-1829, 10 p.Article

The performance of Hg_1-xZn_xTe photodiodesROGALSKI, A; RUTKOWSKI J; JOZWIKOWSKI, K et al.Applied physics. A, Solids and surfaces. 1990, Vol 50, Num 4, pp 379-384, issn 0721-7250Article

Interdiffusion coefficient in Hg_1-xZn_xTe solid solutionsGRANGER, R; POBLA, C; ROLLAND, S et al.Journal of crystal growth. 1990, Vol 101, Num 1-4, pp 261-265, issn 0022-0248Conference Paper

Magneto-optics in II-VI compound type III superlatticesGULDNER, Y; MANASSES, J.Journal of crystal growth. 1990, Vol 101, Num 1-4, pp 540-545, issn 0022-0248Conference Paper

Composition dependence of thermal vibrations in Hg_1-xZn_xTe solid solutions determined by X-ray diffractionBAUDOUR, J. L; GRANGER, M. M; TOUPET, L et al.The Journal of physics and chemistry of solids. 1989, Vol 50, Num 3, pp 309-318, issn 0022-3697, 10 p.Article

The refractive index of the ternary compounds Cd_xZn_1-xTe and Hg_xZn_1-xTeJENSEN, B; TORABI, A.IEEE journal of quantum electronics. 1983, Vol 19, Num 9, pp 1362-1365, issn 0018-9197Article

Charge carrier scattering on the short-range potential of the crystal lattice defects in ZnCdTe, ZnHgSe and ZnHgTeMALYK, Orest P.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5022-5024, issn 0921-4526, 3 p.Conference Paper

Mercury-based narrow-gap superlatticesVOOS, M; MANASSES, J; GULDNER, Y et al.Superlattices and microstructures. 1991, Vol 10, Num 3, pp 311-314, issn 0749-6036Article

XPS study of the Zn_xHg_1-xTe alloys : core levels and valence-band offsetMARBEUF, A; BALLUTAUD, D; TRIBOULET, R et al.Journal of crystal growth. 1990, Vol 101, Num 1-4, pp 608-610, issn 0022-0248Conference Paper

Study of p-TO-n-type conversion in bulk Hg_1-xZn_xTe near x=0.15GRANGER, R; LASBLEY, A; SEYNI, A et al.Journal of crystal growth. 1990, Vol 101, Num 1-4, pp 241-245, issn 0022-0248Conference Paper

Determination of the liquidus lines and isotherms of the Hg-Zn-Te system by a modified direct observation methodYI GAO SHA; WIEDEMEIER, H.Journal of electronic materials. 1991, Vol 20, Num 3, pp 217-221, issn 0361-5235, 5 p.Article

Microhardness of Hg_1-xCd_xTe and Hg_1-xZn_xTeFISSEL, A; SCHENK, M.Crystal research and technology (1979). 1990, Vol 25, Num 1, pp 89-95, issn 0232-1300, 7 p.Article

Intrinsic carrier concentrations and effective masses in the potential infrared detector material, Hg_1-xZn_xTeJOZWIKOWSKI, K; ROGALSKI, A.Infrared physics. 1988, Vol 28, Num 2, pp 101-107, issn 0020-0891Article

Growth of HgZnTe by cast-recrystallizationNOWAK, Z; PIOTROWSKI, J; RUTKOWSKI, J et al.Journal of crystal growth. 1988, Vol 89, Num 2-3, pp 237-241, issn 0022-0248Article

Low-temperature specific heat in Hg_0.88Zn_0.12TeBAGOT, D; ROLLAND, S; TRIBOULET, R et al.Semiconductor science and technology. 1993, Vol 8, Num 5, pp 638-642, issn 0268-1242Article